Ultra-shallow, abrupt, and highly-activated junctions by low-energy ion implantation and laser annealing

Proceedings of the International Conference on Ion Implantation Technology

Volumn 2, Issue , 1999, Pages 1171-1174

  Talwar, Somit ^a   Verma, Gaurav ^a   Weiner, Kurt H ^a  

^a Verdant Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; DIFFUSION IN SOLIDS; ION IMPLANTATION; LASER BEAMS; PHOSPHORUS; RAPID THERMAL ANNEALING; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SOLUBILITY;

LASER ANNEALING; LOW ENERGY ION IMPLANTATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0033309643     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)