Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 6, Issue , 2001, Pages

  Goldys, E M ^a   Godlewski, M ^a   Paskova, T ^b   Pozina, G ^b   Monemar, B ^b  

^a MACQUARIE UNIVERSITY   (Australia)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRON BEAMS; ELECTRON IRRADIATION; EXCITONS; FILM GROWTH; IMAGE ANALYSIS; PHOTOLUMINESCENCE; SPECTROSCOPIC ANALYSIS; VAPOR PHASE EPITAXY;

BAND EDGE EMISSION; HYDRIDE VAPOR PHASE EPITAXY (HVPE); RED EMISSION;

GALLIUM NITRIDE;

EID: 0005741805     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300000132     Document Type: Article

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