High power and high efficiency AlInAs/GaInAs on InP HEMTs

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1991, Pages 721-724

  Matloubian, M ^a   Nguyen, L D ^a   Brown, A S ^a   Larson, L E ^a   Melendes, M A ^a   Thompson, M A ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, POWER TYPE; MICROWAVE MEASUREMENTS;

INDIUM PHOSPHIDE BASED HEMT; POWER-ADDED EFFICIENCIES; S-PARAMETERS MEASUREMENT;

TRANSISTORS, HIGH ELECTRON MOBILITY;

EID: 0026398804     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)