Model-based uniformity control for epitaxial silicon deposition

IEEE Transactions on Semiconductor Manufacturing

Volumn 15, Issue 3, 2002, Pages 295-309

  Gower Hall, Aaron E ^b   Boning, Duane S ^a,b   Rosenthal, Peter ^c   Waldhauer, Ann ^d  

^a IEEE

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c MKS Instruments   (United States)

^d APPLIED MATERIALS INC   (United States)

Author keywords

Epitaxial growth; Process control; Run to run control; Semiconductor process modeling; Uniformity control

Indexed keywords

CONTROL EQUIPMENT; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; PROCESS CONTROL; SEMICONDUCTOR DEVICE MANUFACTURE;

SEMICONDUCTOR PROCESS MODELING;

SEMICONDUCTING SILICON;

EID: 0036691244     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2002.801368     Document Type: Article

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