Strong influence of SiO2 thin film on properties of GaN epilayers

Applied Physics Letters

Volumn 74, Issue 6, 1999, Pages 818-820

  Wang, X C ^a   Xu, S J ^a   Chua, S J ^a   Li, K ^a   Zhang, X H ^a   Zhang, Z H ^a   Chong, K B ^a   Zhang, X ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002924690     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123378     Document Type: Article

References (9)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Jpn. J. Appl. Phys., Part 2 36, L1130 (1997).
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 2014 (1998).
3. J. Neugebauer and C. G. Van de Walle, in Proceedings of the 22nd International Conference on the Physics ofSemiconductors, edited by D. J. Lockwood (World Scientific, Singapore, 1994), p. 2327.
4. M. D. McCluskey, N. M. Johnson, C. G. Van de Walle, D. P. Bour, M. Kneissl, and W. Walukiewicz, Phys. Rev. Lett. 80, 4008 (1998).
5. W. Götz, J. Walker, L. T. Romano, and N. M. Johnson, Mater. Res. Soc. Symp. Proc. 449, 519 (1997).
6. M. W. Cole, F. Ren, and S. J. Pearton, Appl. Phys. Lett. 71, 3004 (1997).
7. X. C. Wang, S. J. Chua, Z. H. Zhang, S. J. Xu, and G. Karunasiri (unpublished).
8. K. Xie, C. R. Wie, J. A. Varriano, and G. W. Wicks, J. Electron. Mater. 23, 1 (1994).
9. S. J. Xu, X. C. Wang, S. J. Chua, C. H. Wang, W. J. Fan, J. Jiang, and X. G. Xie, Appl. Phys. Lett. 72, 3335 (1998).