High-speed polysilicon resonant-cavity Photodiode with SiO2-Si Bragg reflectors

IEEE Photonics Technology Letters

Volumn 9, Issue 6, 1997, Pages 806-808

  Bean, J C ^b,c   Qi, Jieming ^d   Schow, C L ^d   Li, R ^d   Nie, H ^d   Schaub, J ^d   Campbell, J C ^a,d  

^a IEEE

^b Lucent Techonologies   (United States)

^c University of Virginia   (United States)

^d The University of Texas at Austin   (United States)

Author keywords

Bragg reflectors; Photodetector; Resonant cavity photodiode

Indexed keywords

CAVITY RESONATORS; ELECTRIC CURRENTS; MIRRORS; PHOTODETECTORS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON COMPOUNDS;

BRAGG REFLECTORS; POLYSILICON;

PHOTODIODES;

EID: 0031167319     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.584997     Document Type: Article

References (12)

1. O. Wada, Optoelectronic Integration: Physics, Technology, and Applications. Norwell, MA: Kluwer Academic, 1994.
2. M. Dagenais, R. F. Leheny, and J. D. Crow, Integrated Optoelectronics. San Diego, CA: Academic, 1995.
3. A. Chin and T. Y. Chang, "Multilayer reflectors by molecular-beam epitaxy for resonance enhanced absorption in thin high-speed detectors," J. Vac. Sci. Technol., vol. B8, pp. 339-342, 1990.
4. M. S. Ünlü, K. Kishino, J.-I. Chyi, L. Arsenault, J. Reed, S. Noor Mohammad, and H. Morkoc, "Resonant cavity enhanced Al-GaAs/GaAs heterojunction phototransistors with an intemediate InGaAs layer in the collector," Appl. Phys. Lett., vol. 57, pp. 750-752, 1990.
5. R. Kuchibhotla, A. Srinivasan, J. C. Campbell, C. Lei, D. Deppe, Y. S. He, and B. G. Streetman, "Low voltage high gain resonant cavity avalanche photodiode," IEEE Photon. Technol. Lett., vol. 3, pp. 354-356, 1991.
6. S. S. Murtaza, J. C. Campbell, J. C. Bean, and L. J. Peticolas, "High-reflectivity GeSi/Si asymmetric Bragg reflector at 0.8 μm," Electron. Lett., vol. 30, pp. 315-316, 1994.
7. S. S. Murtaza, H. Nie, J. C. Campbell, J. C. Bean, and L. J. Peticolas, "Short-wavelength, high-speed, Si-based resonant-cavity photodetector," IEEE Photon. Technol. Lett., vol. 8, pp. 927-929, 1996.
8. J. C. Campbell, "Resonant-cavity photodetectors," in Dig. Int. Electron Devices Meet., IEDM, 1995, vol. 95, pp. 575-578.
9. 2 resonant-cavity photodetector," Appl. Phys. Lett., vol. 69, pp. 2798-2800, 1996.
10. C. V. Thompson and H. I. Smith, "Surface-energy driven secondary grain growth in ultrathin (<100 nm) films of silicon," Appl. Phys. Lett., vol. 44, pp. 603, 1984.
11. H.-J. Kim and C. V. Thompson, "The effects of dopants on surface-energy driven secondary grain growth in silicon films," J. Appl. Phys., vol. 67, p. 757, 1990.
12. J. E. Bowers, C. A. Burrus, and R. S. Tucker, "Improved very-high-speed InGaAs punch-through photodiode," Electron. Lett., vol. 21, pp. 262-263, 1985.