In situ REM observations of surfactant-mediated epitaxy: Growth of Ge on Si(111) surfaces mediated by Bi

Surface Science

Volumn 372, Issue 1-3, 1997, Pages 1-8

  Minoda, H ^a   Sakamoto, S ^a   Yagi, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bismuth; Epitaxy; Germanium; Reflection electron microscopy (REM); Reflection high energy electron diffraction (RHEED); Semiconductor semiconductor heterostructures; Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

ADSORPTION; BISMUTH; DENSITY (SPECIFIC GRAVITY); DEPOSITION; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; HETEROJUNCTIONS; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SURFACE ACTIVE AGENTS; THERMAL EFFECTS;

REFLECTION ELECTRON MICROSCOPY; TOPOGRAPHY;

SEMICONDUCTING SILICON;

EID: 0031075674     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01138-7     Document Type: Article

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