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Volumn 242, Issue 1-2, 2002, Pages 5-14

Thermodynamic analysis of anion exchange during heteroepitaxy

(5) Wang, Y Q a Wang, Z L a Brown, T b Brown, A b May, G b

a Georgia Institute of Technology (United States)

b GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

A1. Interfacial intermixing; A1. Surface processes; A1. Thermodynamics of anion exchange; A3. Metalorganic vapor phase epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

BOND STRENGTH (CHEMICAL); DIMERS; GIBBS FREE ENERGY; INTERFACES (MATERIALS); ION EXCHANGE; NEGATIVE IONS; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; STRAIN; SURFACE STRUCTURE; THERMODYNAMICS;

HETEROEPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0036643829 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01288-5 Document Type: Article

Times cited : (30)

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