Modification of quantum dot properties via surface exchange and annealing: Substrate temperature effects

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1326-1329

  Shen, Jeng Jung ^a   Brown, April S ^a   Metzger, Robert A ^a   Sievers, Barry ^b   Bottomley, Lawrence ^b   Eckert, Patrick ^c   Carter, W Brent ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000231650     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590068     Document Type: Article

References (4)

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3. K. Ozasa, Y. Aoyagi, Y. J. Park, and L. Samuelson, Appl. Phys. Lett. 71, 797 (1997).
4. J. N. Baillargeon, A. Y. Cho, and K. Y. Cheng, J. Appl. Phys. 79, 7652 (1996).