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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 183, Issue 1-2, 2001, Pages 154-165

Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si

(7) Van den Berg, J A a Zhang, S a Whelan, S a Armour, D G a Goldberg, R D b Bailey, P c Noakes, T C Q c

a UNIVERSITY OF SALFORD (United Kingdom)

b Ion Implant Division (United Kingdom)

c DARESBURY LABORATORY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ION BEAMS; ION IMPLANTATION; PARTICLE BEAM DYNAMICS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SUBSTRATES;

MEDIUM ENERGY ION SCATTERING (MEIS);

SEMICONDUCTING BORON;

EID: 0035399275 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00683-2 Document Type: Article

Times cited : (29)

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