Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 456-460

  Waltereit, P ^a   Craven, M D ^a   Denbaars, S P ^a   Speck, J S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL TENSIONS; BLUE SHIFT; DEFORMATION POTENTIAL; GROWTH PARAMETERS; MATERIAL SYSTEMS; PIEZOELECTRIC POLARIZATIONS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PROFILE CALCULATION; QUANTUM CONFINED STARK EFFECT; RED SHIFT; STRAINED LAYERS; STRUCTURAL AND OPTICAL PROPERTIES; TRANSITION ENERGY; UNSTRAINED MATERIALS;

EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PIEZOELECTRIC TRANSDUCERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036640011     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486259     Document Type: Article

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