Modeling of junction formation and drive-in in ion implanted HgCdTe

Journal of Electronic Materials

Volumn 26, Issue 6, 1997, Pages 629-634

  Holander Gleixner, S ^a   Williams, B L ^a   Robinson, H G ^a   Helms, C R ^a  

^a Stanford University   (United States)

Author keywords

Diffusion limited; Flexible manufacturing; HgCdTe; Infrared focal plane arrays; Ion implantation; N on p; Process modeling

Indexed keywords

EID: 0000765195     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0207-4     Document Type: Article

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