Mechanism for conversion of the conductivity type in arsenic-doped p-CdxHg1-xTe subject to ionic etching

Russian Physics Journal

Volumn 44, Issue 1, 2001, Pages 61-70

  Bogoboyashchii, V V ^a,b,c   Vlasov, A P ^a,b,c   Izhnin, I I ^a,b,c  

^a KREMENCHUK MYKHAILO OSTROHRADSKYI NATIONAL UNIVERSITY   (Ukraine)

^b I Franko L'vov National University   (Finland)

^c L'vov Scientific Research Institute of Materials at the Karat Research and Production Concern   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005536772     PISSN: 10648887     EISSN: 15739228     Source Type: Journal    
DOI: 10.1023/A:1011312902981     Document Type: Article

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