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Journal of Electronic Materials

Volumn 31, Issue 7, 2002, Pages 754-758

Band anticrossing in highly mismatched group II-VI semiconductor alloys

(8) Yu, K M a Wu, J a,b Walukiewicz, W a Beeman, J W a Ager, J W a Haller, E E a,b Miotkowski, I c Ramdas, A c

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b University of California Berkeley (United States)

c PURDUE UNIVERSITY (United States)

Author keywords

Highly mismatched alloys; Implantation, band anticrossing; Photoreflectance

Indexed keywords

CRYSTAL GROWTH; ION IMPLANTATION; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

SEMICONDUCTOR ALLOYS;

CADMIUM ALLOYS;

EID: 0036637768 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-002-0232-2 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.