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Volumn 62, Issue 3, 2000, Pages 1866-1872

Role of electronegativity in semiconductors: Isoelectronic S, Se, and O in ZnTe

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EID: 0005530715     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.62.1866     Document Type: Article
Times cited : (18)

References (36)
  • 1
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    • 0000380045 scopus 로고
    • H. Venghaus and P. J. Dean, Phys. Rev. B 21, 1596 (1980). These authors show that excitons are trapped by acceptors either intentionally introduced into or inadvertantly present in ZnTe. In fact, such bound excitons associated with acceptors and donors are a common occurrence. The binding energy of the bound exciton in our sample with (Formula presented) is comparable to that reported by these authors, who studied several acceptor species.
    • (1980) Phys. Rev. B , vol.21 , pp. 1596
    • Venghaus, H.1    Dean, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.