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Volumn 60, Issue 24, 1999, Pages R16275-R16278

Oxygen isoelectronic impurity in (formula presented)

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EID: 0000582936     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.R16275     Document Type: Article
Times cited : (30)

References (11)
  • 6
    • 85037920276 scopus 로고    scopus 로고
    • W. Czaja, Isoelectronic Impurities in Semiconductors, in Fest- körprobleme XI, edited by O. Madelung (Pergamon, Oxford, 1971) pp. 65–85.
    • W. Czaja, Isoelectronic Impurities in Semiconductors, in Fest- körprobleme XI, edited by O. Madelung (Pergamon, Oxford, 1971) pp. 65–85.
  • 11
    • 85037919575 scopus 로고    scopus 로고
    • (Formula presented), where (Formula presented) is the gamma function and (Formula presented) is the energy of the LO phonon of ZnTe. This function is derived from the Poisson distribution, (Formula presented), by substituting the discrete variable n for a continuous one, (Formula presented), where E is the energy of an emitted photon.
    • (Formula presented), where (Formula presented) is the gamma function and (Formula presented) is the energy of the LO phonon of ZnTe. This function is derived from the Poisson distribution, (Formula presented), by substituting the discrete variable n for a continuous one, (Formula presented), where E is the energy of an emitted photon.


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