Integration of high performance CMOS logic LSI by applying Cu wiring to SiLK™/SiO2 hybrid structure

Materials Transactions

Volumn 43, Issue 7, 2002, Pages 1577-1584

  Ikeda, Masanobu ^a   Watanabe, Kenichi ^a   Kotani, Yoshiyuki ^a   Kawano, Michiari ^a   Mori, Hiroko ^a   Kimura, Takahiro ^a   Suzuki, Takashi ^a   Shimizu, Noriyoshi ^a   Nakamura, Tomoji ^a   Sugiura, Iwao ^a   Yano, Ei ^a   Tabuchi, Kiyotaka ^a   Hasegawa, Toshiaki ^a   Kadomura, Shingo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Adhesion; Copper wiring; Dual damascene; Electromigration; Low k material; SiLK SiO2 hybrid structure; Static random access memory

Indexed keywords

CMOS INTEGRATED CIRCUITS; COPPER; ELECTRIC WIRE; ELECTROMIGRATION; RELIABILITY; SILICA; STRENGTH OF MATERIALS;

HYBRID STRUCTURES;

LSI CIRCUITS;

EID: 0036631108     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.43.1577     Document Type: Article

References (22)