Copper dual damascene interconnects with low-K (Keff < 3.0) dielectrics using FLARE and an organo-silicate hard mask

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 623-626

  Hasegawa, T ^a   Ikeda, K ^a   Tokunaga, K ^a   Yamamura, I ^a   Fukasawa, M ^a   Kito, H ^a   Miyata, K ^a   Komai, N ^a   Taguchi, M ^a   Hirano, S ^a   Tatsumi, T ^a   Kadomura, S ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIELECTRIC MATERIALS; ELECTRON DEVICE MANUFACTURE; ETCHING; LOGIC DEVICES; MASKS; OSCILLATORS (ELECTRONIC); PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICA;

COPPER DUAL DAMASCENE INTERCONNECTS; INORGANIC DIELECTRICS; METHYL SILSESQUIOXANE; RING OSCILLATOR;

INTERCONNECTION NETWORKS;

EID: 0033332831     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)