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Volumn 43, Issue 7, 2002, Pages 1542-1546

Structure analysis of GaN thin film with inversion domains by high voltage atomic resolution microscopy

Author keywords

Gallium nitride (GaN); High resolution electron microscopy (HREM); High voltage electron microscopy; Inversion domain; Molecular beam epitaxy (MBE)

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; FILM GROWTH; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; NITRIDING; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036630639     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.43.1542     Document Type: Conference Paper
Times cited : (9)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.