Structural changes and Si redistribution in Si+ implanted silica glass

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 116, Issue 1-4, 1996, Pages 332-337

  Wendler, E ^a   Herrmann, U ^a   Wesch, W ^a   Dunken, H H ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; HEAT TREATMENT; INFRARED SPECTROSCOPY; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; NITROGEN; OXYGEN; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STRUCTURE (COMPOSITION);

BRIDGING BOND ANGLE; INFRARED REFLECTANCE SPECTROSCOPY; NEAR INFRARED TRANSMITTANCE MEASUREMENT; OSTWALD RIPENING PROCESS; TRANSMITTANCE MEASUREMENTS;

FUSED SILICA;

EID: 0030218154     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)00068-7     Document Type: Article

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