Excellent low-pressure-oxidized S13N4 films on roughened poly-Si for high-density DRAM's

IEEE Electron Device Letters

Volumn 19, Issue 9, 1998, Pages 320-322

  Liu, Han Wen ^b   Cheng, Huang Chung ^a,b  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; LEAKAGE CURRENTS; SILICON NITRIDE; THIN FILMS; WEIBULL DISTRIBUTION;

TIME-DEPENDENT-DIELECTRIC-BREAKDOWN (TDBB);

DIELECTRIC FILMS;

EID: 0032166407     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.709627     Document Type: Article

References (11)

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