Striped anode engineering: A concept for fast switching power devices

Solid-State Electronics

Volumn 46, Issue 6, 2002, Pages 903-909

  Luther King, N ^a   Sweet, M ^a   Spulber, O ^a   Vershinin, K ^a   De Souza, M M ^a   Sankara Narayanan, E M ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; INSULATED GATE BIPOLAR TRANSISTORS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SWITCHING;

FAST SWITCHING POWER DEVICES;

MOS DEVICES;

EID: 0036604605     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00287-8     Document Type: Article

References (20)

1. Experimental study on plasma engineering in 6500V IGBT
2. 4500 Trench IEGT having superior turn-on switching characteristics
3. The 6.5 kV CIGBT in the homogenous base technology
4. The field stop IGBT: A new power device concept with great improvement potential
5. Punch-through IGBTs with homogenous N-Base operating at 4 kV line voltage
6. Proton implantation for silicon power devices
7. 8000V 1000A GTO with low on-state voltage and low switching loss
8. Design consideration and characteristics of rugged PT-IGBTs with 4.5 kV Blocking Capability
9. 4.5 kV-2000 A power pack IGBT (ultra high power flat-packaged PT type RC-IGBT)
10. Cosmic radiation as a cause for power device failure and possible countermeasures
11. Comparison of high voltage power rectifier structures
12. High speed low-losses p-n diode having a channel structure
13. A newly structured high voltage diode highlighting oscillation free function in recovery process
14. Optimum carrier distribution of the IGBT
15. + collector region