A newly structured high voltage diode highlighting oscillation free function in recovery process

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 249-252

  Satoh, K ^a   Morishita, K ^a   Yamaguchi, Y ^a   Hirano, N ^a   Iwamoto, H ^a   Kawakami, A ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; EQUIVALENT CIRCUITS; OSCILLATIONS; PERFORMANCE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SWITCHES;

FREEWHEELING DIODE; HIGH VOLTAGE DIODE; PARALLEL RESISTANCE; RECOVERY PROCESS; SERIES RESISTANCE; SOFT RECOVERY PERFORMANCE; SWITCHING DEVICE;

SEMICONDUCTOR DIODES;

EID: 0034449681     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Analysis of soft recovery of diode and the 2 step gradient structure
2. Study of oscillation in high voltage diode at recovery operation
3. Study on voltage oscillation phenomenon in high power P-i-N diode
4. Optimization of the reverse recovery behavior of fast power diodes using injection efficiency and lifetime control techniques
5. Axial recombination centre technology for freewheeling diode