Characterization of the fabrication process of Nb/Al-AlNx/Nb tunnel junctions with low RnA values up to 1 Ω μm2

Superconductor Science and Technology

Volumn 15, Issue 6, 2002, Pages 945-951

  Iosad, N N ^a   Ermakov, A B ^b   Meijer, F E ^a   Jackson, B D ^c   Klapwijk, T M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^c SRON NETHERLANDS INSTITUTE FOR SPACE RESEARCH   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CHARACTERIZATION; ELECTRIC INSULATORS; FABRICATION; GLOW DISCHARGES; NIOBIUM; PLASMA HEATING; SUPERCONDUCTING MATERIALS;

JUNCTION RESISTANCE; NITRIDATION; PLASMA PROPERTIES; SUPERCONDUCTOR-INSULATOR-SUPERCONDUCTOR JUNCTIONS;

TUNNEL JUNCTIONS;

EID: 0036603348     PISSN: 09532048     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-2048/15/6/319     Document Type: Article

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