Interface and tunneling barrier heights of NbN/AlN/NbN tunnel junctions

Applied Physics Letters

Volumn 75, Issue 5, 1999, Pages 701-703

  Wang, Zhen ^a   Terai, Hirotaka ^a   Kawakami, Akira ^a   Uzawa, Yoshinori ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL ORIENTATION; CURRENT DENSITY; DEPOSITION; INTERFACES (MATERIALS); MAGNESIA; NIOBIUM COMPOUNDS; NITRIDES; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM NITRIDE; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (TEM); NIOBIUM NITRIDE; TUNNELING BARRIER HEIGHT;

TUNNEL JUNCTIONS;

EID: 0032614120     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124487     Document Type: Article

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