Fabrication of Nb/Al-Nx/NbTiN junctions for SIS mixer applications

IEEE Transactions on Applied Superconductivity

Volumn 11, Issue 1 I, 2001, Pages 76-79

  Bumble, B ^a,b   LeDuc, H G ^a,b   Stern, J A ^a,b   Megerian, K G ^a,b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b NONE

Author keywords

AlN; NbTiN; Niobium; SIS mixers; Superconductor device; THz detector

Indexed keywords

ALUMINUM NITRIDE; ANNEALING; ANTENNAS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRODES; FABRICATION; NIOBIUM; NIOBIUM COMPOUNDS; PLASMA APPLICATIONS; VACUUM FURNACES;

DC FLOATING POTENTIAL; PLASMA NITRIDATION; RESISTANCE AREA PRODUCTS; SUBGAP TO NORMAL STATE RESISTANCE RATIO; SUPERCONDUCTOR INSULATOR SUPERCONDUCTOR MIXERS; THIN ALUMINUM PROXIMITY LAYER; TUNNEL BARRIER; VACUUM PROCESS CHAMBER;

JOSEPHSON JUNCTION DEVICES;

EID: 0035268558     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.919288     Document Type: Conference Paper

References (12)

1. A low noise NbTiN-based 850 GHz SIS receiver for the caltech submillimeter observatory
2. Low-noise 1 THz niobium superconducting tunnel junction mixer with normal metal tuning circuit
3. Noise and gain in frequency mixers with NbN SIS junctions
4. High critical current density NbN/AlN/NbN tunnel junctions fabricated on ambient temperature MgO substrates
5. Cross-sectional TEM observation of Nb/Al-Ox - Al/Nb junction structures
6. Development of SIS mixers for 1 THz
7. Currents through thin films of aluminum nitride
8. Nb Josephon junction with an AlNx barrier made by plasma nitridation
9. Fabrication and DC characterization of mixers for use between 600 and 1200 GHz
10. Low-noise submillimeter-wave NbTiN superconducting tunneljunction mixers
11. Tunneling between superconductors