Load impedance influence on the ID(VDS) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz

IEEE Electron Device Letters

Volumn 23, Issue 5, 2002, Pages 246-248

  Vellas, N ^a   Gaquiere, C ^a   Bue, F ^a   Guhel, Y ^a   Boudart, B ^a   De Jaeger, J C ^a   Poisson, M A ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b THALES   (France)

Author keywords

AlGaN; Current collapse; Depletion; GaN; High electron mobility transistor (HEMT); Load impedance; Microwave power; Trap

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD MEASUREMENT; ELECTRIC IMPEDANCE; ELECTRIC LOADS; ELECTROMAGNETIC WAVE ATTENUATION; ELECTRON TRAPS; GALLIUM NITRIDE; MICROWAVE POWER TRANSMISSION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; SUBSTRATES;

CURRENT COLLAPSE; DRAIN CURRENT; LARGE SIGNAL REGIME; LOAD IMPEDANCE; MICROWAVE FREQUENCIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036575932     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.998865     Document Type: Letter

References (8)

1. Temperature pulsed measurements analysis of GaN MESFET
2. High power GaN MESFET on sapphire substrate
3. Comparison between Ti/Al and TI/Al/Ni/Au ohmic contacts to n-type GaN
4. The impact of surface states on the dc and RF characteristics of AlGaN/GaN HFETs
5. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
6. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
7. Mechanism of radio-frequency current collapse in GaN-AlGaN field effect transistors
8. The impact of surface states on the dc and RF characteristics of AlGaN/GaN HFETs