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Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 395-401

Metal-organic vapor phase epitaxy growth and characterization of AlN/GaN heterostructures

(4) Hubbard, S M a Pavlidis, D a Valiaev, V a Eisenbach, A b

a University of Michigan (United States)

b IQE INC (United States)

Author keywords

Aluminum nitride; Atomic force microscopy; Gallium nitride; MIS structures; MOVPE; X ray refiectivity

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; PERMITTIVITY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

METAL-INSULATOR-SEMICONDUCTOR (MIS) HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 0036575599 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-002-0090-y Document Type: Article

Times cited : (8)

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