Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide

Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 340-345

  Lee, S K ^a   Koo, S M ^a   Zetterling, C M ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

4H SiC; AFM; Inductively coupled plasma; Ohmic contacts

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; INDUCTIVELY COUPLED PLASMA; OHMIC CONTACTS; OXIDATION; SPUTTERING; SURFACE ROUGHNESS;

SPECIFIC CONTACT RESISTANCE;

SILICON CARBIDE;

EID: 0036575162     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0079-6     Document Type: Article

References (22)