Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 136-140

  Iliadis, A A ^a   Andronescu, S N ^a   Yang, W ^a   Vispute, R D ^b   Stanishevsky, A ^a   Orloff, J H ^a   Sharma, R P ^b   Venkatesan, T ^b   Wood, M C ^c   Jones, K A ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b Bldg 142   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC RESISTANCE; ION BEAMS; METALLIZING; OHMIC CONTACTS; PLATINUM; PULSED LASER APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; SURFACE TREATMENT; TUNGSTEN;

FOCUSED ION BEAM (FIB) DIRECT-WRITE DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032636138     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0002-5     Document Type: Article

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