Self-assembly of spatially separated silicon structures by Si heteroepitaxy on Ni disilicide

Journal of Applied Physics

Volumn 91, Issue 9, 2002, Pages 6077-6080

  Guliants, Elena A ^a   Ji, Chunhai ^a   Anderson, Wayne A ^a  

^a State University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISILICIDES; DRIVING FORCES; LATTICE-MATCHED; NANOELECTRONIC APPLICATIONS; SELF-ASSEMBLED; SILICON GROWTH; SILICON STRUCTURES; WHISKER FORMATION;

EPITAXIAL GROWTH; SEPARATION;

SILICON;

EID: 0036572535     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1469205     Document Type: Article

References (22)

1. D. Ali and H. Ahmed, Appl. Phys. Lett. 64, 2119 (1994). apl APPLAB 0003-6951
2. E. Leobanhung, L. Guo, Y. Wang, and S. Y. Chou, Appl. Phys. Lett. 67, 938 (1995). apl APPLAB 0003-6951
3. H. Namatsu, K. Kurihara, M. Nagase, and T. Makino, Appl. Phys. Lett. 70, 619 (1997). apl APPLAB 0003-6951
4. Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, H. Murase, and M. Tabe, Electron. Lett. 31, 136 (1995). ell ELLEAK 0013-5194
5. T. Ono, H. Saitoh, and M. Esashi, Appl. Phys. Lett. 70, 1852 (1997). apl APPLAB 0003-6951
6. B. Legrand and D. Stievenard, Appl. Phys. Lett. 74, 4049 (1999). apl APPLAB 0003-6951
7. M. Shibata, S. S. Stoyanov, and M. Ichikawa, Phys. Rev. B 59, 10289 1999). prb PRBMDO 0163-1829
8. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964). apl APPLAB 0003-6951
9. A. M. Morales and C. M. Lieber, Science 279, 208 (1998). sci SCIEAS 0036-8075
10. D. P. Yu, C. S. Lee, I. Bello, X. S. Sun, Y. H. Tang, G. W. Zhou, Z. G. Bai, Z. Zhang, and S. Q. Feng, Solid State Commun. 105, 403 (1998). ssc SSCOA4 0038-1098
11. Y. F. Zhang, Y. H. Tang, N. Wang, D. P. Yu, C. S. Lee, I. Bello, and S. T. Lee, Appl. Phys. Lett. 72, 1835 (1998). apl APPLAB 0003-6951
12. H. Z. Zhang, D. P. Yu, Y. Ding, Z. G. Bai, Q. L. Hang, and S. Q. Feng, Appl. Phys. Lett. 73, 3396 (1998). apl APPLAB 0003-6951
13. S. Yanangiya et al., Appl. Phys. Lett. 71, 1409 (1997). apl APPLAB 0003-6951
14. K. Morimoto, K. Araki, K. Yamashita, K. Morita, and M. Niwa, Appl. Surf. Sci. 117, 652 (1997). asu ASUSEE 0169-4332
15. Y. Takeda, Y. Matsuoka, and T. Motohiro, J. Appl. Phys. 85, 6486 (1999). jap JAPIAU 0021-8979
16. E. A. Guliants and W. A. Anderson, J. Appl. Phys. 87, 3532 (2000). jap JAPIAU 0021-8979
17. E. A. Guliants and W. A. Anderson, J. Appl. Phys. 89, 4648 (2001). jap JAPIAU 0021-8979
18. K. N. Tu, G. Ottaviani, U. Gösele, and H. Föll, J. Appl. Phys. 54, 758 (1983). jap JAPIAU 0021-8979
19. J. W. Mathews, J. Vac. Sci. Technol. 12, 126 (1975). jvs JVSTAL 0022-5355
20. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990). prl PRLTAO 0031-9007
21. M. Ohring, in The Material Science of Thin Films, edited by M. Ohring (Academic, San Diego, CA 1992).
22. A. P. Alivisatos, Science 271, 933 (1996), and references therein. sci SCIEAS 0036-8075