Dependence of the silicon nanowire diameter on ambient pressure

Applied Physics Letters

Volumn 73, Issue 23, 1998, Pages 3396-3398

  Zhang, H Z ^a   Yu, D P ^a   Ding, Y ^a   Bai, Z G ^a   Hang, Q L ^a   Feng, S Q ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; EVAPORATION; IRON; LIQUIDS; MORPHOLOGY; NUCLEATION; PRESSURE EFFECTS; QUANTUM THEORY; SOLIDS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; WIRE;

AMBIENT PRESSURE; SILICON NANOWIRE; VAPOR LIQUID SOLID MECHANISM;

SEMICONDUCTING SILICON;

EID: 0032494919     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122778     Document Type: Article

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