Details of below band-gap uniaxial dielectric function of SiC polytypes studied by spectroscopic ellipsometry and polarized light transmission spectroscopy

Journal of Applied Physics

Volumn 91, Issue 9, 2002, Pages 5677-5685

  Kildemo, M ^a   Hansteen, F ^a   Hunderi, O ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TRANSITIONS; BANDGAP TRANSITION; CRITICAL POINTS; DIELECTRIC FUNCTIONS; ELLIPSOMETRIC MEASUREMENTS; ENERGY POSITION; EXTINCTION COEFFICIENTS; KRAMERS-KRONIG ANALYSIS; LINEAR FUNCTIONS; PHASE MODULATED; POLYTYPES; S-POLARIZED; SECOND DERIVATIVES; SIC POLYTYPES; SPECTROSCOPIC BIREFRINGENCES; THIRD ORDER; TRANSMISSION SPECTROSCOPY; TURNING POINTS; UNIAXIAL DIELECTRIC;

BIREFRINGENCE; ENERGY GAP; SILICON CARBIDE; SPECTROSCOPIC ELLIPSOMETRY;

FUNCTIONS;

EID: 0036572525     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1461887     Document Type: Article

References (27)

1. See, for example, W. J. Choyke and G. Pensl, MRS Bull. 22, 25 (1997). mbu MRSBEA 0883-7694
2. A. V. Mel'nichuk and Yu. A. Pasechnik, Sov. Phys. Solid State 34, 227 (1992). sps SPSSA7 0038-5654
3. M. F. Macmillan, A. Henry, and E. Janzen, J. Electron. Mater. 27, 300 (1998). jem JECMA5 0361-5235
4. S. Nakashima and H. Harma, Phys. Status Solidi A 162, 39 (1997). psa PSSABA 0031-8965
5. H. Harima, S. Nakashima, and T. Uemura, J. Appl. Phys. 78, 1996 (1995). jap JAPIAU 0021-8979
6. N. Adolph, K. Tenelsen, V. I. Gavrilenko, and F. Bechstedt, Phys. Rev. B 55, 1422 (1997). prb PRBMDO 0163-1829
7. M. Kildemo, M. Mooney, C. Sudre, P. Kelly, and G. Crean, Mater. Sci. Forum 338-342, 571 (2000). msf MSFOEP 0255-5476
8. O. P. A. Lindquist, K. Jarrendahl, S. Peters, J. T. Zettler, C. Cobet, N. Esser, D. E. Aspnes, A. Henry, and N. V. Edwards, Appl. Phys. Lett. 78, 2715 (2001). apl APPLAB 0003-6951
9. P. T. B. Schaffer, Appl. Opt. 10, 1034 (1971). apo APOPAI 0003-6935
10. E. Biedermann, Solid State Commun. 3, 343 (1965). ssc SSCOA4 0038-1098
11. G. B. Dubrovskii, A. A. Lepneva, and E. I. Radovanova, Phys. Status Solidi B 57, 423 (1973). psb PSSBBD 0370-1972
12. R. Weingartner, M. Bickermann, D. Hoffmann, M. Rasp, T. L. Straubinger, P. J. Wellmann, and A. Winnacker, Mater. Res. Forum 353-356, 397 (2000).
13. S. Limpijumnong, W. R. L. Lambrecht, S. N. Rashkeev, and B. Segall, Phys. Rev. B 59, 12890 (1999). prb PRBMDO 0163-1829
14. S. Limpijumnong, Ph.D. thesis, Case Western Reserve University, Cleveland, OH, 2000.
15. M. Kildemo, M. Mooney, C. Sudre, and P. Kelly, Appl. Opt. 39, 4649 (2000). apo APOPAI 0003-6935
16. B. Drévillon, Prog. Cryst. Growth Charact. Mater. 27, 1 (1993). pcg PCGMED 0960-8974
17. R. Ossikovski, M. Kildemo, M. Stchakovsky, and M. Mooney, Appl. Opt. 39, 2071 (2000). apo APOPAI 0003-6935
18. K. Forcht, A. Gombert, R. Joerger, and M. Kohl, Thin Solid Films 313-314, 808 (1998). tsf THSFAP 0040-6090
19. R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarised Light (North-Holland, Amsterdam, 1977), pp. 491, 358.
20. J. Lekner, Pure Appl. Opt. 3, 821 (1994). pao PAOAE3 0963-9659
21. J. F. Nye, Physical Properties of Crystals (Oxford University Press, Oxford, 1995), p. 237.
22. M. Kildemo and O. Hunderi, Mater. Sci. Forum 353-356, 417 (2001). msf MSFOEP 0255-5476
23. O. P. A. Lindquist, H. Arwin, U. Forsberg, J. P. Bergman, and K. Jarrendahl, Mater. Res. Forum 338-342, 575 (2000).
24. M. Kildemo, O. Hunderi, and B. Drévillon, J. Opt. Soc. Am. A 14, 931 (1997). joa JOAOD6 0740-3232
25. S. A. Geidur, V. T. Prokopenko, and A. D. Yas'kov, Sov. Phys. Solid State 20, 1654 (1978). sps SPSSA7 0038-5654
26. See, for example, U. Rossow and W. Richer, in Optical Characterisation of Epitaxial Semiconductor Layers, edited by G. Bauer and W. Richer (Springer, Berlin, 1996), pp. 92-94.
27. B. Jensen, in Handbook of Optical Constants of Solids, edited by E. D. Palik (Academic, New York, 1985), pp. 169-188.