-
1
-
-
0026986290
-
Birefringence characterization using transmission ellipsometry
-
D. H. Goldstein and R. A. Chipman, eds., Proc. SPIE 1746
-
S.-M. F. Nee, “Birefringence characterization using transmission ellipsometry,” in Polarization Analysis and Measurement, D. H. Goldstein and R. A. Chipman, eds., Proc. SPIE 1746, 269-280 (1992).
-
(1992)
Polarization Analysis and Measurement
, pp. 269-280
-
-
Nee, S.-M.F.1
-
2
-
-
0005809868
-
Anisotropic incoherent reflection model for spectroscopic ellipsometry of a thick semitransparent anisotropic substrate
-
R. Ossikovski, M. Kildemo, M. Stchakovsky, and M. Mooney, “Anisotropic incoherent reflection model for spectroscopic ellipsometry of a thick semitransparent anisotropic substrate,”Appl. Opt. 39, 2071-2077 (2000).
-
(2000)
Appl. Opt.
, vol.39
, pp. 2071-2077
-
-
Ossikovski, R.1
Kildemo, M.2
Stchakovsky, M.3
Mooney, M.4
-
4
-
-
0031998640
-
Characterization of biaxially stretched plastic films by generalized ellipsometry
-
J. F. Elman, J. Greener, C. M. Herzinger, and B. Johs, “Characterization of biaxially stretched plastic films by generalized ellipsometry,” Thin Solid Films 313-314, 814-818 (1998).
-
(1998)
Thin Solid Films
, vol.313-314
, pp. 814-818
-
-
Elman, J.F.1
Greener, J.2
Herzinger, C.M.3
Johs, B.4
-
5
-
-
0000449829
-
Optical and loss spectra of SiC polytypes from ab initio calculations
-
N. Adolph, K. Tenelsen, V. I. Gavrilenko, and F. Bechstedt, “Optical and loss spectra of SiC polytypes from ab initio calculations,” Phys. Rev. B 55, 1422-1429 (1997).
-
(1997)
Phys. Rev. B
, vol.55
, pp. 1422-1429
-
-
Adolph, N.1
Tenelsen, K.2
Gavrilenko, V.I.3
Bechstedt, F.4
-
6
-
-
0000233142
-
Perpendicular-incidence photometric ellipsometry of biaxial anisotropic thin films
-
A. Zuber, H. Jancher, and N. Kaiser, “Perpendicular-incidence photometric ellipsometry of biaxial anisotropic thin films,”Appl. Opt. 35, 5553-5556 (1996).
-
(1996)
Appl. Opt.
, vol.35
, pp. 5553-5556
-
-
Zuber, A.1
Jancher, H.2
Kaiser, N.3
-
7
-
-
0033718640
-
Anisotropic dielectric function of semi-insulating 4H-SiC using spectroscopic ellipsometry and an incoherent reflection model ofa thick transparent anisotropic substrate
-
M. Kildemo, M. Mooney, C. Sudre, P. Kelly, and G. Crean, “Anisotropic dielectric function of semi-insulating 4H-SiC using spectroscopic ellipsometry and an incoherent reflection model ofa thick transparent anisotropic substrate,” Mater. Sci. Forum 338-342, 571-574 (2000).
-
(2000)
Mater. Sci. Forum
, vol.338-342
, pp. 571-574
-
-
Kildemo, M.1
Mooney, M.2
Sudre, C.3
Kelly, P.4
Crean, G.5
-
8
-
-
0002322690
-
Three polarization reflectometry methods for determination of optical anisotropy
-
G. I. Surdutovich, R. Z. Vitlina, A. V. Ghiner, S. F. Durrant, and V. Baranauskas, “Three polarization reflectometry methods for determination of optical anisotropy,” Appl. Opt. 37, 65-78 (1998).
-
(1998)
Appl. Opt
, vol.37
, pp. 65-78
-
-
Surdutovich, G.I.1
Vitlina, R.Z.2
Ghiner, A.V.3
Durrant, S.F.4
Baranauskas, V.5
-
9
-
-
5244311861
-
Physical properties of SiC
-
W. J. Choyke and G. Pensl, “Physical properties of SiC,” MRS Bull. 22, 25-29 (1997).
-
(1997)
MRS Bull
, vol.22
, pp. 25-29
-
-
Choyke, W.J.1
Pensl, G.2
-
10
-
-
0027882071
-
Phase modulated ellipsometry from the ultraviolet to the infrared: In situ applications to the growth of semiconductors
-
B. Drevillon, “Phase modulated ellipsometry from the ultraviolet to the infrared: in situ applications to the growth of semiconductors,” Prog. Cryst. Growth Charact. 27, 1-87 (1993).
-
(1993)
Prog. Cryst. Growth Charact.
, vol.27
, pp. 1-87
-
-
Drevillon, B.1
-
11
-
-
0003808259
-
-
North-Holland, Amsterdam, The Netherlands
-
R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, The Netherlands, 1977), pp. 358, 491.
-
(1977)
Ellipsometry and Polarized Light
-
-
Azzam, R.M.A.1
Bashara, N.M.2
-
12
-
-
0028498562
-
Optical properties of a uniaxial layer
-
J. Lekner, “Optical properties of a uniaxial layer,” Pure Appl. Opt. 3, 821-837 (1994).
-
(1994)
Pure Appl. Opt.
, vol.3
, pp. 821-837
-
-
Lekner, J.1
-
13
-
-
84893889145
-
Spectroscopic Fourier methods for thickness measurements of thick uniaxial wafers with dispersive birefringence using polarimetric techniques
-
to be published
-
M. Kildemo and O. Hunderi, “Spectroscopic Fourier methods for thickness measurements of thick uniaxial wafers with dispersive birefringence using polarimetric techniques,” J. Opt. A: Pure Appl. Opt. (to be published).
-
J. Opt. A: Pure Appl. Opt
-
-
Kildemo, M.1
Hunderi, O.2
-
14
-
-
0001118795
-
The optical absorption bands and their anisotropy in the various modifications of SiC
-
E. Biedermann, “The optical absorption bands and their anisotropy in the various modifications of SiC,” Solid State Commun. 3, 343-346 (1965).
-
(1965)
Solid State Commun
, vol.3
, pp. 343-346
-
-
Biedermann, E.1
-
15
-
-
0000607601
-
Optical absorption bands in the 1-3-eV range in n-type SiC polytypes
-
S. Limpijumnong, W. R. L. Lambrecht, S. N. Rashkeev, and B. Segall, “Optical absorption bands in the 1-3-eV range in n-type SiC polytypes,” Phys. Rev. B 59, 12890-12899 (1999).
-
(1999)
Phys. Rev. B
, vol.59
, pp. 12890-12899
-
-
Limpijumnong, S.1
Lambrecht, W.R.L.2
Rashkeev, S.N.3
Segall, B.4
-
16
-
-
0000181571
-
Dielectric function and reflectivity of 2C-silicon carbide and the component perpendicular to the c axis of 6H-silicon carbide in the energy region 1.5-9.5 eV
-
S. Logothedis and J. Petalas, “Dielectric function and reflectivity of 2C-silicon carbide and the component perpendicular to the c axis of 6H-silicon carbide in the energy region 1.5-9.5 eV,” J. Appl. Phys. 80, 1768-1772 (1996).
-
(1996)
J. Appl. Phys.
, vol.80
, pp. 1768-1772
-
-
Logothedis, S.1
Petalas, J.2
-
17
-
-
78650840103
-
Silicon carbide (SiC)
-
E. D. Palik, ed.Academic, Orlando, Fla
-
W. J. Choyke and E. D. Palik, “Silicon carbide (SiC),” inHandbook ofOptical Constants ofSolids, E. D. Palik, ed. (Academic, Orlando, Fla., 1985), p. 587.
-
(1985)
Handbook Ofoptical Constants Ofsolids
, pp. 587
-
-
Choyke, W.J.1
Palik, E.D.2
-
18
-
-
0032001219
-
Measurement of the absorption edge of thick transparent substrates using an incoherent reflection model and spectroscopic UV-visible-near-IR ellipsometry
-
M. Kildemo, R. Ossikovski, and M. Stchakovsky, “Measurement of the absorption edge of thick transparent substrates using an incoherent reflection model and spectroscopic UV-visible-near-IR ellipsometry,” Thin Solid Films 313-314,108-113 (1997).
-
(1997)
Thin Solid Films
, vol.313-314
, pp. 108-113
-
-
Kildemo, M.1
Ossikovski, R.2
Stchakovsky, M.3
-
19
-
-
0001069480
-
Dielectric function of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si
-
S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, “Dielectric function of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si,” J. Appl. Phys. 83, 8353-8361 (1999).
-
(1999)
J. Appl. Phys
, vol.83
, pp. 8353-8361
-
-
Zollner, S.1
Chen, J.G.2
Duda, E.3
Wetteroth, T.4
Wilson, S.R.5
Hilfiker, J.N.6
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