Ion-solid interactions and defects in silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 261-265

  Weber, W J ^a   Jiang, W ^a   Gao, F ^a   Devanathan, R ^b  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

Amorphization; Computer simulations; Defects; Ion channeling; Radiation effects; Silicon carbide

Indexed keywords

AMORPHIZATION; COMPUTER SIMULATION; CRYSTAL DEFECTS; ION BEAMS; MOLECULAR DYNAMICS; RADIATION EFFECTS; SINGLE CRYSTALS;

ION-CHANNELING;

SILICON CARBIDE;

EID: 0036569053     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01193-4     Document Type: Conference Paper

References (22)