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Volumn 609, Issue , 2000, Pages A511-A516

Molecular beam epitaxially deposited amorphous silicon

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; QUARTZ; RAMAN SPECTROSCOPY; SPUTTER DEPOSITION; SUBSTRATES; ULTRAHIGH VACUUM;

EID: 0034428421     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-609-a5.1     Document Type: Article
Times cited : (5)

References (19)
  • 14
    • 0003667043 scopus 로고
    • The Physics of Hydrogenated Amorphous Silicon II, edited by J.D. Joannopoulos and G. Lucovsky, Springer-Verlag, New York
    • (1984) Topics of Applied Physics , vol.56 , pp. 61
    • Ley, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.