Temperature dependent transient leakage currents in amorphous silicon thin film transistors

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 671-676

  Lemmi, F ^a   Street, R A ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; HOLE TRAPS; LEAKAGE CURRENTS; THERMAL EFFECTS; THERMAL STRESS; TRANSIENTS;

BACK CHANNEL ELECTRON CONDUCTION; CONTACT INJECTION MECHANISM; DRAIN CURRENT; HOLE CONDUCTION; NONMONOTONIC DECAY; TRANSIENT LEAKAGE CURRENTS;

THIN FILM TRANSISTORS;

EID: 0033297295     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-671     Document Type: Article

References (5)

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2. F. Lemmi, R.A. Street, MRS Symp. Proc507, p.79 (1998).
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5. R.A. Street, Philos. Mag. B, 63 (6), p. 1343 (1991).