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Volumn 5, Issue 2-3, 2002, Pages 301-304

Anisotropic deposition of copper by H-assisted plasma chemical vapor deposition

Author keywords

Anisotropic chemical vapor deposition; Cu; H; Interconnect; Plasma CVD; ULSI

Indexed keywords

ANISOTROPY; ION BOMBARDMENT; METALLIZING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; ULSI CIRCUITS;

EID: 0036557720     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00108-7     Document Type: Conference Paper
Times cited : (10)

References (12)
  • 1
    • 0004245602 scopus 로고    scopus 로고
    • Roadmap update, by the Semiconductor Industry Association & SEMATECH
    • International Technology Roadmap for Semiconductors, 2000 Roadmap update, by the Semiconductor Industry Association & SEMATECH.
    • (2000) International Technology Roadmap for Semiconductors


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.