Conformal deposition of high-purity copper using plasma reactor with H atom source

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 7 B, 1999, Pages 4492-4495

  Jin, Hong Jie ^a   Shiratani, Masaharu ^a   Nakatake, Yasuhiro ^a   Fukuzawa, Tsuyoshi ^a   Kinoshita, Toshio ^a   Watanabe, Yukio ^a   Toyofuku, Masaharu ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b FUKUOKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DISSOCIATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; IMPURITIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REMOVAL; TEMPERATURE; THIN FILMS;

INTERCONNECT; STICKING PROBABILITY; SUBSTRATE TEMPERATURE; TRENCH;

ATOMS;

EID: 0033157712     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4492     Document Type: Article

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