Heteroepitaxial growth of 3C-SiC on Si(0 0 1) without carbonization

Journal of Crystal Growth

Volumn 179, Issue 1-2, 1997, Pages 153-160

  Lee, K W ^a   Yu, K S ^a   Kim, Y ^a  

^a Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

1,3 disilabutane; Chemical vapor deposition; Heteroepitaxy; Silicon carbide; Single precursor

Indexed keywords

CARBONIZATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

CUBIC SILICON CARBIDE; HETEROEPITAXY;

EPITAXIAL GROWTH;

EID: 0031195452     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00094-8     Document Type: Article

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15. In the temperature range 800-1200 K involving the growth temperatures employed in our CVD, an effusive beam of 1,3-disilabutane directed to the Si surface yielded desorption of only hydrogen molecules. These results evidently indicate that both Si and C atoms in the source chemical remain on the substrate surface under our CVD conditions and neither Si nor C species desorb up to the growth temperature range employed in our CVD. This is a good piece of evidence against the possibility that carbonization action would occur on Si surface when 1,3-disilabutane is used for the growth of SiC film.