Electrically detected magnetic resonance of a-Si:H at low magnetic fields: The influence of hydrogen on the dangling bond resonance

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 343-347

  Brandt, M S ^a   Bayerl, M W ^a   Stutzmann, M ^a   Graeff, C F O ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

a si:H; Dangling bond resonance; Hydrogen

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; HYDROGEN; MAGNETIC FIELD EFFECTS; MAGNETIC RESONANCE; SPECTROMETERS;

DANGLING BONDS; ZEEMAN SPLITTING;

SEMICONDUCTING SILICON;

EID: 4243593747     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00073-8     Document Type: Article

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