SCOPUS 정보 검색 플랫폼

Volumn 240, Issue 1-2, 2002, Pages 87-97

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE

(8) Haberland, K a,b Kaluza, A c Zorn, M d Pristovsek, M a Hardtdegen, H c Weyers, M d Zettler, J T a,b Richter, W a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b LayTec Gesellschaft Für In situ and Nano Sensorik MbH ^* (Germany)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

d LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

Author keywords

A1. Characterization; A1. In situ monitoring; A1. Ternary composition; A1. Wafer temperature; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting aluminium compounds; B2. Semiconducting gallium compounds

Indexed keywords

CALIBRATION; FILM GROWTH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS; THERMOCOUPLES;

REFLECTANCE ANISOTROPY SPECTROSCOPY;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0036538202 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)00910-7 Document Type: Article

Times cited : (28)

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