Emissivity compensated pyrometry of the substrate surface during movpe growth of inxGa1-xas1-yPy /InP materials in rotating disc reactors

Materials Research Society Symposium - Proceedings

Volumn 607, Issue , 2000, Pages 309-314

  Ramer, J ^a   Patel, B ^a   Patel, A ^a   Boguslavskiy, V ^a   Gurary, A ^a  

^a EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; PYROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

INDIUM GALLIUM ARSENIC PHOSPHIDE; ROTATING DISC REACTORS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0033698665     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/PROC-607-309     Document Type: Article

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