Circuit simulation models for coming MOSFET generations

IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences

Volumn E85-A, Issue 4, 2002, Pages 740-748

  Miura Mattausch, Mitiko ^a   Ueno, Hiroaki ^a   Mattausch, Hans Juergen ^a   Kumashiro, Shigetaka ^b   Yamaguchi, Tetsuya ^b   Yamashita, Kyoji ^b   Nakayama, Noriaki ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

Charge based modeling; MOSFET model; Sub 100 nm technology; Surface potential

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; EQUIVALENT CIRCUITS; POISSON EQUATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

CHARGE BASED MODELING; CIRCUIT SIMULATION; SURFACE POTENTIAL;

MOSFET DEVICES;

EID: 0036538053     PISSN: 09168508     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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