Precise physical modeling of the reverse-short-channel effect for circuit simulation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1999, Pages 207-210

  Suetake, M ^a   Miura Mattausch, M ^a   Mattausch, H J ^a   Kumashiro, S ^a   Shigyo, N ^a   Odanaka, S ^a   Nakayama, N ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; CRYSTAL IMPURITIES; ELECTRIC FIELDS; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

REVERSE-SHORT-CHANNEL EFFECTS;

INTEGRATED CIRCUIT LAYOUT;

EID: 0033285012     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)