Laser-interference crystallization of amorphous silicon: Applications and properties

Physica Status Solidi (A) Applied Research

Volumn 166, Issue 2, 1998, Pages 667-674

  Nebel, C E ^a   Christiansen, S ^b   Strunk, H P ^b   Dahlheimer, B ^a   Karrer, U ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTALLIZATION; GLASS; GRAIN GROWTH; LIGHT INTERFERENCE; NANOSTRUCTURED MATERIALS; NEODYMIUM LASERS; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

LASER INTERFERENCE CRYSTALLIZATION (LIC);

AMORPHOUS SILICON;

EID: 0032048420     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199804)166:2<667::AID-PSSA667>3.0.CO;2-Y     Document Type: Article

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