Electrical characteristics of a novel gate structure 4H-SiC power static induction transistor

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1085-1088

  Iwasaki, T ^a   Oono, T ^a   Asano, K ^b   Sugawara, Y ^b   Yatsuo, T ^a  

^a HITACHI LTD   (Japan)

^b KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

Power Device; Silicon Carbide; Static Induction Transistor

Indexed keywords

GATES (TRANSISTOR); POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

ON STATE VOLTAGE DROP; STATIC INDUCTION TRANSISTORS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0031675106     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1085     Document Type: Article

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