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Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 315-318

Growth evolution of dislocation loops in ion implanted 4H-SiC

(2) Persson, P O A a Hultman, L a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LOSS SPECTROSCOPY; ION IMPLANTATION; MATHEMATICAL MODELS; PRECIPITATION (CHEMICAL); THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION LOOPS; GROWTH EVOLUTION; OSTWALD RIPENING;

SILICON CARBIDE;

EID: 14344270798 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.353-356.315 Document Type: Article

Times cited : (4)

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