Synthesis of wurtzite GaN films by reactive hot wall vapour deposition technique: Fabrication of Au/GaN Schottky diode

Materials Chemistry and Physics

Volumn 74, Issue 3, 2002, Pages 282-288

  Deb, B ^a   Ganguly, A ^a   Chaudhuri, S ^a   Chakraborti, B R ^b   Pal, A K ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

Gallium nitride films; Schottky diode; Synthesis

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROSTRUCTURE; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; SYNTHESIS (CHEMICAL); VAPOR DEPOSITION;

HOT WALL VAPOR DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0036532939     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(01)00493-X     Document Type: Article

References (32)