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Journal of Physics and Chemistry of Solids

Volumn 63, Issue 4, 2002, Pages 561-568

Comparative investigation of photoluminescence of silicon wire structures and silicon oxide films

(11) Torchynska, T a Aguilar Hernandez, J a Morales Rodriguez, M a Mejia Garcia, C a Contreras Puente, G a Becerril Espinoza, F G a Bulakh, B M b Scherbina, L V b Goldstein, Y c Many, A c Jedrzejewski, J c

a INSTITUTO POLITÉCNICO NACIONAL (Mexico)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

c HEBREW UNIVERSITY OF JERUSALEM (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EXCITONS; PHOTOLUMINESCENCE; POROUS SILICON; RAMAN SCATTERING; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

SILICON WIRE STRUCTURES;

SILICON COMPOUNDS;

EID: 0036532719 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3697(01)00194-9 Document Type: Article

Times cited : (5)

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